Wenshen Li, Ph.D. student in electrical and computer engineering, is the lead author of the paper published in Applied Physics Letters, titled “ Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes.” Devansh Saraswat, Yaoyao Long, Kazuki Nomoto along with Professors Debdeep Jena and Huili Grace Xing are co-authors. “For the first time, we observed an ideal reverse leakage characteristic in Ga2O3 Schottky barrier diodes,” said Li. “With such information, we can accurately determine how large an electric field can be supported in Ga2O3...
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